Nội dung text 10. P2C10. সেমিকন্ডাক্টর ও ইলেক্ট্রনিক্স Merge OK_Sha 28.4.24_Mahee -Ok.pdf
†mwgKÛv±i I B‡jKUawb· Practice Content 1 `kg Aa ̈vq †mwgKÛv±i I B‡jKUawb· Semiconductor and Electronics weMZ eQ‡i BwÄwbqvwis fvwm©wU‡Z Avmv wjwLZ cÖkœmg~n 1| A B A B jwRK †MUwU n‡Z mZ ̈K mviwY •Zwi Ki| [BUET 21-22] mgvavb: – A – B . AB – = – AB + A – B = A B A B – AB A – B A B = – AB + A – B 0 0 0 0 0 0 1 1 0 1 1 0 0 1 1 1 1 0 0 0 2| IB, IE, VBC, VBE, VCE wbY©q Ki| [ = 49, IC = 5 mA] [BUET 21-22] Ic IB 2.2 k 2 k Vcc = 13 V mgvavb: = IC IB 49 = 5 IB IB = 0.102 mA (Ans) IE = IB + IC = 5.102 mA (Ans) VBE = – 2 103 0.102 10–3 = – 0.204 V (Ans) VCE = Vcc – 2.2 103 5 10–3 = 2V (Ans) VBC = VBE – VCE = – 2.204 V (Ans.) 3| bx‡Pi eZ©bxi Kv‡jKUi wefe VC wbY©q Ki hLb UavbwR÷iwU active mode G wμqvkxj Av‡Q (A_©vr, †eBR-GwgUvi Rvskb m¤§yLx †SuvK Ges Kv‡jKUi-†eBR Rvskb wegyLx †SuvK) †`Iqv Av‡Q, VBE = 0.7 V Ges = 100. [BUET 19-20] 10V RC=4.7 k 4V B E C RE=3.3 k mgvavb: 10V 4.7 k 4V B E C 3.3 k IB IC 10V 0V IE cÖ_g jy‡c, 4 = VBE + 3.3 × 103 × IE IE = 1 mA = IC IB = IC IE – IC 100 = IC 1 – IC IC = 0.99 mA GLb, 10 – VC = 4.7 × 103 IC VC = 5.347 V (Ans.) 4| GKwU mvaviY wbtmviK weea©‡Ki cÖevn jvf 70 nq| hw` wbtmviK cÖevn 8.8 mA nq, Zvn‡j msMÖvnK Ges cxV cÖev‡ni gvb wbY©q Ki| UavbwR÷iwU hLb mvaviY cxV weea©K wnmv‡e KvR K‡i, ZLb cÖevn jvf KZ? [BUET 16-17] mgvavb: cÖ_g †ÿ‡Î, cÖevn jvf, = IC IB = IE – IB IB 70 = 8.8 – IB IB IB = 0.124 mA (Ans.) IC = IE – IB = 8.8 – 0.124 = 8.676 mA (Ans.) wØZxq †ÿ‡Î, cÖevn jvf, = IC IE = 8.676 8.8 = 0.986 (Ans.)
†mwgKÛv±i I B‡jKUawb· Practice Content 3 IC IE IC IB IE IB †Kv‡bvwUB bq DËi: IC IE 3. Kgb †em UavbwR÷‡ii Collector current 47 A n‡Z 96 A Ges emitter current 100 A n‡Z 150 A n‡jv| Kv‡i›U Amplification factor = ? [BUET Preli 22-23] 0.98 0.99 0.49 0.48 DËi: 0.98 e ̈vL ̈v: = IC IE = 96 – 47 150 – 100 = 0.98 4. Transistor Kx wn‡m‡e KvR Ki‡Z cv‡i? [BUET Preli 21-22] Amplifier, Rectifier Amplifier, Switch Rectifier, Switch Amplifier, Rectifier, Switch DËi: Amplifier, Switch 5. GwU †Kvb †MBU? [BUET Preli 21-22] X Y Output 1 1 0 1 0 0 0 1 0 0 0 1 OR Gate AND Gate NAND Gate NOR Gate DËi: NOR Gate 6. †Kvb UavbwR÷‡i BbcyU I AvDUcyU wmMb ̈v‡ji g‡a ̈ `kv cv_©K ̈ KZ? [BUET Preli 21-22] 0 180 90 – 90 DËi: 180 7. wb‡Pi †KvbwU‡K †Wv‡c›U wnmv‡e e ̈envi Ki‡j p-UvBc Aa©cwievnxi ag© cvIqv hv‡e bv? [BUET 11-12] A ̈vjywgwbqvg Gw›Ugwb M ̈vwjqvg BwÛqvg DËi: Gw›Ugwb 8. p-n Rvskb ms‡hvM ̄’‡j wW‡cøkb ͇̄ii m„wói KviY njÑ [BUET 10-11] †nv‡jb Zvob Avavb evn‡Ki e ̈vcb B‡jKUa‡bi Zvob Ac`ae ̈ Avqb-Gi ̄’vbvšÍi DËi: Avavb evn‡Ki e ̈vcb 9. wb‡Pi wP‡Î Si Ges Ge Wv‡qvW `ywUi wb-f‡ëR h_vμ‡g 0.7 Ges 0.3 V| 5.5 k †iv‡ai ga ̈ w`‡q KZ we`y ̈r cÖevwnZ n‡e? Ge Wv‡qvWwU D‡ëv K‡i ms‡hvM w`‡j †ivawUi `yB cÖv‡šÍi wefe cv_©K ̈ KZ n‡e? [CKRUET 23-24] +12 V Si Ge 5.5 k 2.0 mA and 0 V 2.0 mA and 0.7 V 2.0 A and 0 V 2.0 mA and 0.3 V 2.0 mA and 11.3 V DËi: 2.0 mA and 0 V e ̈vL ̈v: I = 12 – 0.7 – 0.3 5.5 103 = 2mA Ge Wv‡qvWwU D‡ëv K‡i mshy3 Ki‡j I = 0 V = 0 R = 0 10. GKwU Kgb †em ms‡hv‡M _vKv UavbwR÷‡ii wbtmviK I †em cÖevn h_vμ‡g 5 mA Ges 0.5 mA| wbtmviK Gi cÖevn 5 ̧Y I †em cÖevn 3 ̧Y Kiv n‡j, UavbwR÷iwUi cÖevn e„w× KZ? [CKRUET 23-24] 0 6.67 9 15.67 24.67 DËi: Blank e ̈vL ̈v: Kgb †em ms‡hv‡M cÖevn jvf = = IC IE = 5 – 0.5 5 = 0.9 = IC IE = IE – IB IE = (5 × 5) – (3 × 0.5) 5 × 5 = 0.94 = 0.04 myZivs Kgb †em Kv‡bKk‡b cÖevn jvf | †m‡ÿ‡Î DËi †bB| cÖevn jvf = ai‡j, = IC IB = IE – IB IB = 5 – 0.5 0.5 = 9 = IC IB = IE – IB IE