Nội dung text 14. Semiconductors and Electronic Devices - Questions.pdf
14. Semiconductors and Electronic Devices 1(1.)The distance between the body centred atom and a corner atom in sodium (a = 4.225 Å) is (a.) 3.66 Å (b.) 3.17 Å (c.) 2.99 Å (d.) 2.54 Å 2(2.)In order to forward bias a PN junction, the negative terminal of battery is connected to (a.) P-side (b.) Either P-side or N-side (c.) N-side (d.) None of these 3(3.)When boron is added as an impurity to silicon, the resulting material is (a.) n-type semiconductor (b.) n-type conductor (c.) p-type conductor (d.) p-type semiconductor 4(4.)In the circuit given below, V(t) is the sinusoidal voltage source, voltage drop VAB(t) across the resistance R is (a.) Is half wave rectified (b.) Is full wave rectified (c.) Has the same peak value in the positive and negative half cycles (d.) Has different peak values during positive and negative half cycle 5(5.)The truth table given below is for (A and B are the inputs, Y is the output) A B Y 0 0 1 1 0 1 0 1 1 1 1 0 (a.) NOR (b.) AND (c.) XOR (d.) NAND 6(6.)The combination of ‘NAND’ gates shown here under figure, are equivalent to (a.) An OR gate and an AND gate respectively (b.) An AND gate and a NOT gate respectively (c.) An AND gate and an OR gate respectively (d.) An OR gate and a NOT gate respectively 7(7.)The correct curve between potential (V) and distance (d) near p − n junction is (a.) (b.) (c.) (d.) 8(8.)In a NPN transistor, 108 electrons enter the emitter in 10−8 s. If 1% electrons are lost in the base, the fraction of current that enters the collector and current amplification factor are respectively (a.) 0.8 and 49 (b.) 0.9 and 90 (c.) 0.7 and 50 (d.) 0.99 and 99 9(9.)The binary number 10111 is equivalent to the decimal number (a.) 19 (b.) 31 (c.) 23 (d.) 22 R1=100 R2=150 D1 D2 V(t) R VAB