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NEET REVISION 14. SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS(H) NEET REVISION Date: March 18, 2025 Dura on: 1:00:00 Total Marks: 180 INSTRUCTIONS INSTRUCTIONS PHYSICS 1. The logic performed by the circuit shown in fig‐ ure is equivalent to [Q365254] (1) AND (2) NAND (3) OR (4) NOR 2. The band gap in germanium is . Assuming that the number of hole-electron pairs is proportional to , find the fractional increase in the number of charge carriers in pure germanium as the temperature is increased from to . [Take ] [Q365269] (1) 13.4 (2) 17.2 (3) 10.6 (4) 15.4 3. The current through an ideal -junction shown in the following circuit diagram will be [Q365291] (1) (2) (3) (4) 4. A pure semiconductor has equal electron and hole concentration of Doping by in‐ dium increases to What is in the doped semiconductor? [Q365588] (1) (2) (3) (4) 5. Zener diode has contact potential of in the absence of biasing. It undergoes zener break‐ down for an electric field of at the depletion region of junction. If the width of the depletion region is , what should be the reverse bias potential for zener breakdown to occur? [Q365405] (1) (2) (3) (4) 6. In the circuits shown below, the ratio is equal to ____ . (Assume both the diodes to be ideal) [Q365329] (1) 1.65 (2) 3.47 (3) 9.36 (4) 5.16 7. Find the current passing through the battery. [Q365315] (1) (2) (3) (4) 8. A potential difference of is applied between the opposite faces of a Ge crystal plate of area and thickness . If the concentra‐ Eg = 0.64 eV e (−Eg/2k T) 300 K 384 K k = 1.4 × 10 −23 , ln(14.4) = 8 3 PN 1 mA Zero 30 mA 10 mA 10 16m−3 . nh 4.5 × 10 22m−3 . ne 10 22 m−3 10 6m−3 4.5 × 10 22m−3 10 m−3 32 4.5×10 22 1 V 2.5 × 10 6 V /m p − n 1.2 μm 2 V 7 V 5 V 3 V I1 : I2 1 A 2 A 0.5 A 4 A 2V 1 cm2 0.5 mm

NEET REVISION (1) 11 (2) 13 (3) 15 (4) 21 21. If the resistance is increased, how will the readings of the ammeter and voltmeter change? [Q365485] (1) Both increases (2) Both decreases (3) Ammeter increases & voltmeter decreases (4) Ammeter decreases & voltmeter increases 22. From the circuit shown below, the maximum and minimum values of zener diode current are [Q365397] (1) (2) (3) (4) 23. In the circuit shown in figure, when the input voltage of the base resistance is is zero and is also zero. Then current amplifi‐ cation factor of transistor is [Q365469] (1) 103 (2) 83 (3) 133 (4) 93 24. In the given circuit the value of is 100. When then the transistor is operating in [Q365518] (1) Normal Active mode (2) Saturation mode (3) Inverse Active mode (4) Cut off mode 25. The output of following circuit for given in‐ put is [Q365239] (1) (2) 0 (3) (4) 26. The graph of characteristics of a junction diode is shown below. If the diode is connected to a signal generator of peak voltage , then the dc current across the load of will be (Take ) [Q365320] (1) (2) (3) (4) 27. A specimen of silicon is to be made -type semiconductor, for this one atom of indium, on an average, is doped in silicon atoms. If the number density of silicon is , then the number of acceptor atoms per will be [Q365553] (1) (2) (3) (4) 28. Following gates section is connected in a com‐ plete suitable circuit. For which of the following combination, bulb will glow (ON). [Q365224] (1) (2) (3) (4) 29. In the circuit shown, the base current is The value of is [Q365483] (1) (2) R1 6 mA, 5mA 14 mA, 5mA 9mA, 1mA 3mA, 2mA 10 V , VBE VCE β IC = 1.5mA Y A ⋅ B A ⋅ B(A + B) A ̄ ⋅ B I − V p − n 22 V 4.8 Ω π = 22/7 3.27 A 1.25 A 5.62 A 4.65 A p 5 × 10 7 5 × 10 28atom/m3 cm3 2.5 × 10 30 1.0 × 10 13 1.0 × 10 15 2.5 × 10 36 A = 0, B = 1, C = 1, D = 1 A = 1, B = 1, C = 1, D = 0 A = 1, B = 0, C = 0, D = 0 A = 0, B = 0, C = 0, D = 1 30 μA. R1 300 kΩ 30 kΩ