Tiêu đề mcq POWER ELECTRONICS.pdf ✅

Way to Polytechnic ● Way to Polytechnic POWER ELECTRONICS Unit-1 Power Electronic Devices 1. Which of the following is not a power electronic device? a) Diode b) Resistor c) Thyristor d) IGBT **Answer: b) Resistor** 2. What is the construction of a power transistor? a) P-N junction b) N-N junction c) P-P junction d) N-P junction **Answer: d) N-P junction** 3. Which of the following is not a characteristic of a power transistor? a) High switching speed b) High current handling capability c) Low voltage drop d) Low switching losses **Answer: c) Low voltage drop** 4. FET stands for: a) Field Emission Transistor b) Field Effect Transistor c) Free Electron Transistor d) Forward Emitter Transistor **Answer: b) Field Effect Transistor** 5. MOSFET stands for: a) Metal Oxide Semiconductor Fast Electron Transistor b) Metal Oxide Semiconductor Field Effect Transistor c) Metal Oxide Silicon Field Emitter Transistor d) Metal Oxide Sensor Field Effect Transistor **Answer: b) Metal Oxide Semiconductor Field Effect Transistor** 6. What is the main principle of operation of a MOSFET? a) Current control by voltage b) Voltage control by current https://sbte.way2poly.in
Way to Polytechnic ● Way to Polytechnic c) Voltage control by temperature d) Temperature control by current **Answer: a) Current control by voltage** 7. IGBT combines the advantages of: a) MOSFET and BJT b) Diode and SCR c) Diode and BJT d) MOSFET and SCR **Answer: a) MOSFET and BJT** 8. The main application of IGBT is in: a) Audio amplifiers b) Switching power supplies c) Light dimmers d) Voltage regulators **Answer: b) Switching power supplies** 9. Which of the following is not a characteristic of IGBT? a) Fast switching speed b) High input impedance c) High current handling capability d) Low saturation voltage **Answer: b) High input impedance** 10. V-I characteristics of power transistor show: a) Linear relationship b) Exponential relationship c) Parabolic relationship d) Inverse relationship **Answer: a) Linear relationship** 11. What type of semiconductor material is used in FET construction? a) Only P-type b) Only N-type c) Both P-type and N-type d) Neither P-type nor N-type **Answer: c) Both P-type and N-type** 12. Which region of operation is desirable for power transistors in applications? a) Active region b) Saturation region c) Cut-off region d) Inverse region https://sbte.way2poly.in
Way to Polytechnic ● Way to Polytechnic **Answer: b) Saturation region** 13. What is the primary role of a gate terminal in a MOSFET? a) To control the voltage across drain and source b) To control the current flow from drain to source c) To control the voltage between gate and source d) To control the current flow between gate and source **Answer: c) To control the voltage between gate and source** 14. In IGBT, the gate is connected to which junction? a) Base-Emitter junction b) Collector-Base junction c) Emitter-Collector junction d) Gate-Source junction **Answer: d) Gate-Source junction** 15. Which device is known for its ability to handle high power and high voltage applications? a) Diode b) Transistor c) Thyristor d) FET **Answer: c) Thyristor** 16. The conductivity modulation effect is observed in which power electronic device? a) Diode b) SCR c) BJT d) IGBT **Answer: d) IGBT** 17. What is the reverse recovery time of a power diode? a) Time taken for the diode to turn on b) Time taken for the diode to turn off c) Time taken for the diode to switch from conducting to non-conducting state d) Time taken for the diode to switch from non-conducting to conducting state **Answer: d) Time taken for the diode to switch from non-conducting to conducting state** 18. Which device is used for high-frequency switching applications? a) Diode b) Thyristor c) MOSFET d) IGBT **Answer: c) MOSFET** https://sbte.way2poly.in
Way to Polytechnic ● Way to Polytechnic 19. Which characteristic of power electronic devices is crucial for minimizing power losses? a) Forward voltage drop b) Reverse breakdown voltage c) Reverse recovery time d) Forward current rating **Answer: a) Forward voltage drop** 20. Which type of power electronic device is known for its bidirectional current conduction capability? a) Thyristor b) Diode c) IGBT d) MOSFET **Answer: a) Thyristor** Unit-2 Thyristor Family Devices 1. What does SCR stand for in the context of power electronics? a) Silicon Capacitor Rectifier b) Silicon Controlled Rectifier c) Silicon Current Regulator d) Silicon Conduction Relay **Answer: b) Silicon Controlled Rectifier** 2. Which of the following is a type of SCR? a) BJT b) MOSFET c) UJT d) GTO **Answer: d) GTO** 3. What is the primary function of a Snubber circuit in SCR applications? a) To prevent over-voltage b) To prevent over-current c) To provide controlled cooling d) To prevent voltage spikes and ringing **Answer: d) To prevent voltage spikes and ringing** https://sbte.way2poly.in