Content text 18. Current Electcity Eas 1 Ans.pdf
1. (a) Number of electrons flowing per second e i t n = 19 19 = 4.8 / 1.6 10 = 310 − 2. (c) ne J vd = v J d (current density) A i J1 = and 2 1 2 2 J A i A i J = = = ; v v v ( d )1 = ( d )2 = 3. (b) Order of drift velocity 10 m /sec 10 cm /sec −4 −2 = = 4. (b) Density of 3 3 Cu = 9 10 kg / m (mass of 1 m3 of Cu) 6.0 1023 atoms has a mass = 63 10–3 kg Number of electrons per m3 are 3 28 3 23 9 10 8.5 10 63 10 6.0 10 = = − Now drift velocity neA i v = d = 28 19 3 2 8.5 10 1.6 10 (0.5 10 ) 1.1 − − = 0.1 10 m /sec −3 = 5. (c) Because 1 H.P. = 746 J/s = 746 watt 6. (a) 2 R l l l R R = 2 % 2 0.1 0.2% 0 = = R R 7. (a) = = = − − − − 6 2 2 2 8 10 (50 10 ) 50 10 50 10 A l R 8. (a) Resistivity of some material is its intrinsic property and is constant at particular temperature. Resistivity does not depend upon shape. 9. (d) (1 0.00125 ) (1 0.00125 27) 2 1 (1 ) (1 ) 2 1 2 1 t t t + + = + + = t = 854 C T = 1127 K 10. (c) A l i e R A l R A l R1 2 . . 2 2 2 R1 = R2 11. (d) In case of stretching of wire 2 R l If length becomes 3 times so Resistance becomes 9 times i.e. R' = 920 =180 12. (d) Resistivity is the property of the material. It does not depend upon size and shape. 13. (a) Because with rise in temperature resistance of conductor increase, so graph between V and i becomes non linear. 14. (c) Because V-i graph of diode is non-linear. 15. (a) l V m e vd = or l El m e vd = . (Since V = El) vd E 16. (a) Resistance of conductor depends upon relation as 1 R . With rise in temperature rms speed of free electron inside the conductor increase, so relaxation time decrease and hence resistance increases 17. (c) ampere t q i 2 2 4 = = = 18. (b) l Al A 3 Volume = = 3 = Now 3 / 3 3 2 l l l A l R = = = 2 9 3 l = = 19. (c) ampere t ne i 10 1 62.5 10 1.6 10 18 19 = = = − 20. (b) In twisted wire, two halves each of resistance 2 are in parallel, so equivalent resistance will be = 1 2 2 . 21. (d) In stretching of wire 4 1 r R 22. (b) 3 2 (1 10 ) 7 22 1 0.7 − = = A L R 6 2.2 10 − = ohm-m. 23. (b) 2 2 1 1 1 r d R A R [d = diameter of wire] 24. (b) i = q 19 15 = 1.6 10 6.6 10 − 10.56 10 A 1mA 4 = = − 25. (d) 2 r l R l m r l r l l R R 20 1 5 2 1 1 2 2 2 2 1 2 2 2 1 2 1 = = = 26. (c) 27. (b) In semiconductors charge carries are free electrons and holes
28. (b) Net current = (+) + (−) i i i nett n q t n(+)q(+) (−) (−) = + e t n e t n = + (+) (−) 2 = 3.2 1018 2 1.6 10–19 + 3.6 1018 1.6 10–19 = 1.6 A (towards right) 29. (b) In the absence of external electric field mean velocity of free electron (Vrms) is given by V T m KT Vrms = rms 3 30. (a) With rise in temperature specific resistance increases 31. (c) For metallic conductors, temperature co-efficient of resistance is positive. 32. (d) 33. (b) Length l = 1 cm m 2 10 − = Area of cross-section A = 1 cm 100 cm = 100 cm2 = 10–2 m2 Resistance R = 3 10–7 2 2 10 10 − − = 3 10–7 34. (c) 29 6 19 10 10 1.6 10 20 − − = = nAe i vd 1.25 10 m / s −3 = 35. (b) Specific resistance j E k = 36. (b) 2 d l A l R 1 2 4 2 2 1 2 2 1 2 1 = = = d d L L d d l l R R R2 = R1 = R. 37. (c) 6 19 22 10 1.6 10 8.4 10 1.344 = = − − nAe i vd 0.01cm / s 0.1mm / s 10 1.6 8.4 1.344 = = = 38. (a) Internal resistance Temperatur e 1 39. (d) Charge = Current × Time =5 × 60 = 300 C 40. (b) By R = l / A 41. (b) 42. (a) 43. (b) a l R = for first wire and R’= 4 4 R a l = for second wire. 44. (c) For semiconductors, resistance decreases on increasing the temperature. 45. (a) A l ne n A l R . 2 = = 46. (b) Because as temperature increases, the resistivity increases and hence the relaxation time decreases for conductors . 1 47. (b) In VI graph, we will not get a straight line in case of liquids. 48. (c) A l R = 49. (a) Since 2 R l If length is increased by 10%, resistance is increases by almost 20% Hence new resistance R' = 10 + 20% of 10 10 12 . 100 20 = 10 + = 50. (c) [1 (500 )] [1 (150 )] 500 150 + + = R R . Putting R150 = 133 and = 0.0045 / C, we get R500 = 258 51. (c) 2 6 7 22 64 10 198 7 r A l R = = − r = 0.024 cm 52. (b) Current density 2 r i A i J = = 2 1 2 2 2 1 2 1 r r i i J J = But the wires are in series, so they have the same current, hence 1 2 i = i . So 9 : 1 2 1 2 2 2 1 = = r r J J 53. (b) As R i V = and R temperature inet +2e + – – e 100 cm 1 c m 1 cm
54. (b) 2 R l If l doubled then R becomes 4 times. 55. (a) Temperature coefficient of a semiconductor is negative. 56. (a) The reciprocal of resistance is called conductance 57. (a) Current Potential difference Resistance = 58. (c) Ohm’s Law is not obeyed by semiconductors. 59. (c) Drift velocity d d v l n e V v ; = does not depend upon diameter. 60. (a) Using [1 ( )] RT2 = RT1 + T2 − T1 [1 (100 50)] R100 = R50 + − 7 = 5[1 + ( 50)] C o 0.008 / 250 (7 5) = − = 61. (b) This is because of secondary ionisation which is possible in the gas filled in it. 62. (b) 63. (c) (1 3.92 10 ) (1 3.92 10 20) 76.8 50 (1 ) (1 ) 3 3 2 1 2 1 t t t R R − − + + = + + = t = 167 C 64. (c) From 2 i v A i v r neA i vd = d d 65. (d) Resistivity depends only on the material of the conductor. 66. (a) A particular temperature, the resistance of a superconductor is zero = = = 0 1 1 R G 67. (b) Net current t n q t n q i i i ( )( ) ( )( ) + + − − = + + − = + e t n e t n i = + + − ( ) ( ) 18 19 18 19 2.9 10 1.6 10 1.2 10 1.6 10 − − = + i = 0.66 A 68. (d) If E be electric field, then current density j = E Also we know that current density A i j = Hence j is different for different area of cross-sections. When j is different, then E is also different. Thus E is not constant. The drift velocity d v is given by ne j vd = = different for different j values. Hence only current i will be constant. 69. (d) 70. (a) A l R = and mass m = volume (V) density (d) = (A l) d Since wires have same material so and d is same for both. Also they have same mass Al = constant A l 1 4 1 2 2 1 2 1 2 2 1 2 1 = = = r r A A A A l l R R 4 2 2 34 = r r R R2 = 544 71. (a) L A A R R A l R ( , 1 2 2 1 = = constant) 2 1 2 2 1 = = R R A A Now, when a body dipped in water, loss of weight = V L g = AL L g So, 2; (Loss of wight) (Loss of weight) 2 1 2 1 = = A A so A has more loss of weight. 72. (c) Q = it = 20 × 10–6 × 30 = 6× 10–4 C 73. (b) Ge is semiconductor and Na is a metal. The conductivity of semiconductor increases and that of the metals decreases with the rise in temperature. 74. (b) t ne i = 16 19 3 10 1.6 10 1.6 10 1 = = = − − e it n . 75. (c) Drift velocity 2 1 or 1 d v A v neA i vd = d d P Q P Q Q P v v d d d d v v 4 1 4 / 2 1 2 2 = = = = . 76. (c) Human body, though has a large resistance of the order, of K (say 10k ), is very sensitive to minute currents even as low as a few mA. Electrons, excites and disorders the nervous i Ne+ – + e –
system of the body and hence one fails to control the activity of the body. 77. (c) (1 ) 0 R R t t = + 4.2 = 0 4 0 R (1 + 0.004 100 ) =1. R R0 = 3 . 78. (d) m l R 2 2 3 3 2 2 2 2 1 1 1 2 3 : : : : = m l m l m l R R R 5 1 : 3 9 : 1 25 = 125 : 15 : 1 5 1 = 25 : 3 : . 79. (b) 80. (a) 4 2 4 2 4 1 2 2 1 n R R r nr R R r r R R = = = . 81. (d) (1 100 ) (1 50) 6 5 (1 ) (1 ) 2 1 2 1 + + = + + = t t R R C o per 200 1 = Again by (1 ) 0 R R t t = + 50 4 . 200 1 5 0 1 0 = = R + R 82. (b) Q mA T Q i 1.6 10 5 10 0.8 1 9 1 5 = = = = − . 83. (b) 2.4 1.7 10 1 10 8 7 copper iron Copper iron = = − − r r . 84. (c) 1.6 10 6.8 10 1.1 10 . 19 15 3 i e amp − − = = = 85. (b) Resistivity of the material of the rod 1 3 10 (0.3 10 ) −3 −2 2 = = l RA = m − 9 27 10 Resistance of disc (Area of cross section) (Thickness) R = = 2 2 3 9 (1 10 ) (10 ) 27 10 − − − 2.7 10 . 7 = − 86. (c) By using (1 ) 0 R R t t = + 3 (1 4 10 ) 3 0 0 R R t − = + t C o = 500 . 87. (a) 6 10 1.6 10 0.96 . 15 19 i = = mA − 88. (a) 1 1.6 10 16 10 19 3 − − = = n t ne i 17 n = 10 89. (d) = = = 10 0.25 10 0.2 100 0.5 i V R . 90. (a) A l i V R = = 3 2 2 (1 10 ) 50 10 4 2 − − = = m −6 1 10 . 91. (c) 92. (b) C R Vt Q t Q R V i 240 10 20 2 60 = = = = = . 93. (a) 2 2 1 2 2 1 = l l R R R l 4 4 /2 2 2 2 R R l l R R = = = . 94. (b) 95. (b) 2 9 6 1 9 10 10 1.6 10 40 − − = = neA i Vd = 2.5 10 m/sec −3 . 96. (c) 2 8 6 1 9 8.4 10 10 1.6 10 5.4 − − = = nAe i Vd = 0.4 10 m/sec 0.4mm/sec 3 = − . 97. (a) 2 2 1 2 1 = l l R R = = = = 160 16 1 20 10 5 2 2 2 R R . 98. (c) ; 1 R where = Relaxation time. When lamp is switched on, temperature of filament increase, hence decrease so R increases 99. (d) R = 91 10 9.1k 2 . 100. (c) 101. (a) 102. (d) 3 2 3 2 2 2 1 2 1 1 2 3 2 : : : : m l m l m l R R R m l R = 27 : 6 :1 3 1 : 2 4 : 1 9 : : R1 R2 R3 = = . 103. (b) 15 19 3 6.25 10 1.6 10 1 10 = = − − n . 104.(b) 2 1 2 2 1 2 2 ' = = r r i i v v r i v ne r i vd d 2 ' v v = .